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Volume 2, Issue 1, January 2013, Page: 20-29
A Two-Band Tight-Binding Model of Spin-Polarized Transport in Magnetic Tunnel Junctions
N. Strelokov, Department of Physics, Lomonosov Moscow State University, Moscow, Russia
M. Zhuravlev, Kurnakov Institute of General and Inorganic Chemistry of RAS, Moscow; Smolny College of Liberal Arts and Sciences, St. Petersburg State University, St. Petersburg, Russia
N. Ryzhanova, Department of Physics, Lomonosov Moscow State University, Moscow, Russia
A. Vedyayev, Department of Physics, Lomonosov Moscow State University, Moscow, Russia
Received: Dec. 21, 2012;       Published: Jan. 10, 2013
DOI: 10.11648/j.ijmsa.20130201.13      View  3564      Downloads  158
Abstract
The main features determining spin-dependent transport in magnetic tunnel junctions are well appreciated now mainly due to ab initio calculations. Nevertheless, it seems useful to have a comparatively simple model which reproduces the salient characteristics of spin-dependent transport in magnetic multilayers. We present two-band tight-binding model of magnetic tunnel junction with the layers of arbitrary thickness and non-collinear magnetization configuration. The model accounts for different symmetry of the tunneling electrons and their mixing on the interfaces. As an illustration for double-barrier structure we calculate I-V curves and spin-transfer torque. The calculations demonstrate the resonant character of the I-V dependences. Also, the significant difference in the magnitude of the torque acting on the various planes of the same magnetic layer is found.
Keywords
Magnetic Tunnel Junction, Two-Band Model, I-V Curves, Spin-Transfer Torque
To cite this article
N. Strelokov, M. Zhuravlev, N. Ryzhanova, A. Vedyayev, A Two-Band Tight-Binding Model of Spin-Polarized Transport in Magnetic Tunnel Junctions, International Journal of Materials Science and Applications. Vol. 2, No. 1, 2013, pp. 20-29. doi: 10.11648/j.ijmsa.20130201.13
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